Scanning Electron Microscopy (SEM) with high-precision EDS

Short Description Allows high quality imaging of poor electrical conductors by both secondary and backscattered electrons Designed for extreme versatility of experimental and characterization approaches. Energy dispersive X-ray analysis allowing identification of elemental distribution from sub-micrometre areas of the specimens.

Description of the technique The Scanning Electron Microscope (SEM) is a TESCAN VEGA 4 equipped with a GMU chamber and a detector for Energy Dispersive X-ray Spectroscopy (EDS). It is also equipped with a Back-Scattered Electron (BSE) detector and it is able to work in low-vacuum (up to 500 Pa) conditions (with nitrogen or water vapour).

Roberto Senesi; Roberto.senesi@uniroma2.it Laboratory: Microscopy

SEM TESCAN VEGA 3 (SEM_EDS) [0001] with sputtering machine [0041]

TECHNICAL SPECIFICATIONS

  • Very wide chamber
  • Low vacuum (up to 500 Pa) with nitrogen and water vapour;

AVAILABLE TECHNIQUES

  • Scanning Electron Microscopy (SEM)
  • Energy Dispersive X-ray Spectroscopy (EDS)

Ancient leather (Museo Egizio); Materials for concentrated solar power;

Cultural Heritage; Energy;